– USA, CA – Transphorm, Inc. (OTC: TGAN), a pioneer in the development and manufacturing of high reliability, high-performance gallium nitride power semiconductors, today announced the appointment of Dr. Julian Humphreys to its Board of Directors, effective October 14, 2020.
“On behalf of the Board of Directors and our entire worldwide team, we welcome and are extremely proud to add Julian as a new independent director. Dr. Humphreys brings exceptional experience and highly relevant industry knowledge, specifically within power semiconductor technology. At this stage in the Company’s growth, it is imperative that the leadership and expertise of our Board continues to expand. With the addition of Julian, we have added an independent director who can offer the Company well informed guidance, perspective and oversight as we continue to execute on Transphorm’s long-term strategic plan.”said CEO, Mario Rivas.
About Dr. Julian Humphreys
Dr. Humphreys brings substantial knowledge in all aspects of the Power semiconductor business including P&L, sales and marketing, development, and design of power semiconductor technologies. Dr. Humphreys most recently served as SVP and General Manager at Nexperia B.V., a leading expert in the high-volume production of essential semiconductors and components that are required by every electronic design in the world and a long term cooperation partner to Transphorm in the global automotive market. Before Nexperia, he was the VP and General Manager of Nexperia’s predecessor, NXP Semiconductors N.V. (NASDAQ: NXPI) Standard Products Division.
Dr. Humphreys holds a Bachelor of Engineering in electronics and a Ph.D. in semiconductor physics, both from the University of Liverpool.
About Transphorm, Inc.
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high-reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density, and 20% lower system cost. Transphorm is headquartered in Goleta, California, and has manufacturing operations in Goleta and Aizu, Japan.
For more information: https://www.transphormusa.com/en/
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